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Two-dimensional Boron Nitride for Electronics and Energy Applications
Posted:2020-11-10 18:50    Column:2021

J.M. Wang, L.Z. Zhang, L.F. Wang, W.W. Lei, Z.-S. Wu*

Energy & Environmental Materials, 2021, Accepted.

DOI: 10.1002/eem2.12159 [PDF]


Two-dimensional (2D) boron nitride (BN), the so-called “white graphene”, has demonstrated a great potential in various fields, particularly in electronics and energy, by utilizing its wide band gap (~5.5 eV), superior thermal stability, high thermal conductance, chemical inertness and outstanding dielectric properties. However, to further optimize the performances from the view of structure-properties relationship, the determinative factors such as crystallite sizes, layer thickness, dispersibility and surface functionalities should be precisely controlled and adjusted. Therefore, in this review, the synthesis and functionalization methods including “top-down” and “bottom-up” strategies, non-covalent and covalent modifications for 2D BN are systematically classified and discussed at first, thus catering for the requirements of versatile applications. Then, the progresses of 2D BN applied in the fields of microelectronics such as field-effect transistors and dielectric capacitors, energy domains such as thermal energy management and conversion, and batteries and supercapacitors are summarized to highlight the importance of 2D BN. Notably, this contents not only contain the state-of-the-art 2D BN composites, but also brings the current novel design of 2D BN based microelectronic units. Finally, the challenges and perspectives are proposed to better broaden the scope of this material. Therefore, this review will pave an all-around way for understanding, utilizing and applying 2D BN in future electronics and energy applications.

Dalian Institute of Chemical Physics, CAS
457 Zhongshan Road Dalian, China 116023
E-mail: wuzs@dicp.ac.cn

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