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Targeted Synthesis and Reaction Mechanism Discussion of Mo2C based Insertion-Type Electrodes for Advanced Pseudocapacitors
Posted:2020-03-22 12:05    Column:2020

Y.Y. Zhu, X. Ji, L.F. Yang, J. Jia, S. Cheng*, H.L. Chen, Z-S Wu, D. Passarello, M.L. Liu

Journal of Materials Chemistry A, 2020, 8, 7819.

DOI: 10.1039/D0TA00697A [PDF]


Mo2C is one of the few compounds that possess good electronic conductivity. Meanwhile, it possesses a natural 1D zigzag tunnel structure that is ideally suited for fast ion diffusion. Here, an effective approach is demonstrated for fabrication of structurally stable N-doped Mo2C/C nanobelts. They demonstrate high and fast energy storage ability with initial capacitances of 1139 C g−1at 1 mV s−1, 151 C g−1at an extremely high scan rate of 2000 mV s−1and 208 C g−1at a discharge current density of 200 A g−1. After electrochemical activation of cycling, the capacity is continuously enhanced and much higher capacitances of 2523 C g−1at 1 mV s−1and 1403 C g−1at 50 A g−1are achieved after 15 000 cycles at 50 mV s−1. Using the power law, it is evaluated that a surface-controlled capacitive process makes the main contribution to the capacity, which is over 90% when the scan rates are higher than 10 mV s−1and still high as 73% at 1 mV s−1. Fromin situsynchrotron XRD, it is found that there is a negligible change in the crystal structure and volume during charging/discharging, reflecting an insertion-type charge storage mechanism.

Dalian Institute of Chemical Physics, CAS
457 Zhongshan Road Dalian, China 116023
E-mail: wuzs@dicp.ac.cn

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