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Bulk Growth of Mono- to Few-Layer Graphene on Nickel Particles by Chemical Vapor Deposition from Methane
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Bulk Growth of Mono- to Few-Layer Graphene on Nickel Particles by Chemical Vapor Deposition from Methane
Posted:2016-03-18 15:06    Column:2010
Z. Chen, W. Ren*, B. Liu, L. Gao, S. Pei, Z.-S. Wu, J. Zhao, H.-M. Cheng*, 
Carbon 2010, 48 (12): 3543-3550.  
DOI:10.1016/j.carbon.2010.05.052  [PDF

 
Abstract: 
A method for the bulk growth of mono- to few-layer graphene on nickel particles by chem-ical vapor deposition from methane at atmospheric pressure is described. A graphene yield of about 2.5% of the weight of nickel particles used was achieved in a growth time of 5 min. Scanning and transmission electron microscopy, Raman spectroscopy, thermogravimetry, and electrical conductivity measurements reveal the high quality of the graphene obtained. Suspended graphene can be prepared during this process, bridging the gaps between nearby nickel grains. After the growth of graphene the nickel particles can be effectively removed by a modest FeCl3/HCl etching treatment without degradation of the quality of the graphene sheets.
Dalian Institute of Chemical Physics, CAS
457 Zhongshan Road Dalian, China 116023
E-mail: wuzs@dicp.ac.cn
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